
Massimo V. Fischetti
Professor of Materials Science and Engineering; Texas Instruments Distinguished Chair in Nanoelectronics
The University of Texas at Dallas, USA
Keynote Talk
To be announced.
Biography
Massimo V. Fischetti received the Laurea in Physics from the University of Milan in 1974 and the Ph.D. in Physics from the University of California, Santa Barbara, in 1978. In 1979 he joined STMicroelectronics, Italy, where he worked on hot-electron degradation of silicon dioxide. In 1983 he moved to the IBM T. J. Watson Research Center, where he worked for more than twenty years on the theory of electron transport in insulators and silicon.
At IBM he co-developed the Monte Carlo device simulator DAMOCLES and showed that high-κ gate insulators reduce electron mobility in transistors. He later joined the University of Massachusetts Amherst and then UT Dallas. His current research concerns electronic transport in materials such as silicon nanowires and graphene.
He received the 2011 IEEE Cledo Brunetti Award and is a Fellow of the American Physical Society.


